| PART |
Description |
Maker |
| BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode
DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| BAT14 BAT14-03W |
Silicon Schottky Diode
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz
|
Infineon Technologies A...
Infineon Technologies AG
|
| SD103AWS-TP SD103BWS-TP |
DIODE SCHOTTKY 40V 350MA SOD323 0.35 A, 40 V, SILICON, SIGNAL DIODE
400mW Small Signal Schottky Diode 20 to 40 Volts
DIODE SCHOTTKY 30V 350MA SOD323
|
Micro Commercial Components, Corp.
|
| IRF7526D1 IRF7526D1TR |
Co-packaged HEXFETò Power MOSFET and Schottky Diode
FETKYMOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-30V Rds(on)=0.20ohm Schottky Vf=0.39V)
FETKY MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BAT17 BAT17-05W BAT17-06 BAT17-07 BAT17-04 BAT17-0 |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range
Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| CMLSH05-4 |
SMD Schottky Diode Single
SURFACE MOUNT PICOmini LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| Q67040S4647 SDT08S60 |
Silicon Carbide Schottky Diodes - 8A diode in TO220-2 package
Thinq SiC Schottky Diode
|
Infineon Technologies AG
|
| DSA60C100PB DSA50C100HB DSA50C100QB DSA50C100QB-1 |
Schottky Diode Gen 2 High Performance Schottky Diode Low Loss and Soft Recovery
|
IXYS Corporation
|
| MBR0540 2497 |
40V 0.5A Schottky Discrete Diode in a SOD-123 package
From old datasheet system
SCHOTTKY DIODE
|
International Rectifier
|
| CPD92 |
Chip Form: SCHOTTKY DIODE
Schottky Diode High Voltage Schottky Diode Chip
|
Central Semiconductor Corp
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|
